Adhesion of Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon
نویسندگان
چکیده
In this work, the effect of ?-irradiation on adhesion properties FP9120 diazoquinone–novolac photoresist films deposited single-crystal silicon wafers by centrifugation was studied using an indentation method. It found that led to a decrease in specific peeling energy G silicon. case, IR spectra exhibited intensity vibration bands due Si–O–C moiety, which is responsible for silicon, course ?-irradiation. The observed experimental results were explained taking into account radiation-chemical and relaxation processes occurring both at photoresist/silicon interface bulk polymer film.
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ژورنال
عنوان ژورنال: High Energy Chemistry
سال: 2021
ISSN: ['0018-1439', '1608-3148']
DOI: https://doi.org/10.1134/s0018143921060151